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CMOS Technology Across Technology Nodes: A Comprehensive Review of Device Scaling, Architectural Evolution, and Future Directions

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CMOS Technology Across Technology Nodes: A Comprehensive Review of Device Scaling, Architectural Evolution, and Future Directions


Tripti R Kulkarni | Vasudeva G



Tripti R Kulkarni | Vasudeva G "CMOS Technology Across Technology Nodes: A Comprehensive Review of Device Scaling, Architectural Evolution, and Future Directions" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-10 | Issue-4, August 2026, pp.939-944, URL: https://www.ijtsrd.com/papers/ijtsrd142126.pdf

Complementary metal-oxide-semiconductor (CMOS) technology has served as the structural backbone of the semiconductor industry for more than five decades, evolving from micrometer-scale planar transistors to sub-2-nanometer three-dimensional architectures. This review synthesizes the trajectory of CMOS scaling across all major technology nodes, beginning with the empirical foundations laid by Moore's Law and Dennard's constant-field scaling theory, and progressing through the strain-engineered, high-k/metal-gate planar transistors of the 90-32 nm era, the tri-gate FinFET architectures that dominated the 22-7 nm nodes, and the gate-all-around (GAA) nanosheet and nanowire transistors now enabling the 5-2 nm regime. Particular attention is given to the enabling role of extreme ultraviolet (EUV) lithography, the persistent challenge of leakage power following the breakdown of Dennard scaling, and emerging post-CMOS strategies including complementary field-effect transistors (CFETs), monolithic 3D integration, and two-dimensional (2D) channel materials such as transition metal dichalcogenides. By critically examining device physics, process innovations, and the economic constraints that shape roadmap decisions, this review identifies electrostatic control, contact resistivity, and heterogeneous material integration as the dominant bottlenecks for future scaling and outlines the architectural pathways most likely to sustain transistor density growth beyond the 1 nm node.

CMOS scaling; Moore's Law; Dennard scaling; FinFET; gate-all-around (GAA); nanosheet transistor; EUV lithography; high-k metal gate; complementary FET (CFET); 2D semiconductors.


IJTSRD142126
Volume-10 | Issue-4, August 2026
939-944
IJTSRD | www.ijtsrd.com | E-ISSN 2456-6470
Copyright © 2019 by author(s) and International Journal of Trend in Scientific Research and Development Journal. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0) (http://creativecommons.org/licenses/by/4.0)

International Journal of Trend in Scientific Research and Development - IJTSRD having online ISSN 2456-6470. IJTSRD is a leading Open Access, Peer-Reviewed International Journal which provides rapid publication of your research articles and aims to promote the theory and practice along with knowledge sharing between researchers, developers, engineers, students, and practitioners working in and around the world in many areas like Sciences, Technology, Innovation, Engineering, Agriculture, Management and many more and it is recommended by all Universities, review articles and short communications in all subjects. IJTSRD running an International Journal who are proving quality publication of peer reviewed and refereed international journals from diverse fields that emphasizes new research, development and their applications. IJTSRD provides an online access to exchange your research work, technical notes & surveying results among professionals throughout the world in e-journals. IJTSRD is a fastest growing and dynamic professional organization. The aim of this organization is to provide access not only to world class research resources, but through its professionals aim to bring in a significant transformation in the real of open access journals and online publishing.

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